Nickel Aluminum (NiAl) Sputtering Target Description:

The preparation and application of nickel-aluminum sputtering targets involve the following key parameters:

Common ratio: Ni : Al = 50 : 50 (at%)

NiAl60/40wt%

NiAl50/50at%

NiAl97/3wt%

NiAl76/24wt%

Purity: 99.9% (3N) - 99.99% (4N), semiconductor-grade applications require ≥99.99%.

Melting point: Approximately 1400 - 1640℃, exhibiting excellent high-temperature stability.

Preparation process: Hot pressing sintering

Core application areas

The application of nickel-aluminum sputtering targets is highly focused on high-tech fields with stringent 

requirements for high temperature resistance and reliability.

1. Aerospace and High-Temperature Protection (Core Application)

MCrAlY type coatings (M representing Ni, Co, etc.) are formed by sputtering nickel-aluminum targets, 

serving as the binder layer for thermal barrier coatings.

2. Semiconductors and Microelectronics

In chip manufacturing, nickel-aluminum sputtering targets are used to form thin-film resistors or diffusion barrier layers.

3. Photovoltaic Devices and Glass Coating

In the field of solar cells, nickel-aluminum sputtering targets can be used to prepare electrode layers or reflective layers.

4. Passive Components

In passive components such as chip resistors and capacitors, nickel-aluminum targets can be used for 

sputtering end electrodes or resistive layers, providing stable electrical performance and good solderability.

NiAl9wt%-4N-COA

Related Sputtering Targets

NiCu sputtering target